Solid Power-DS-SPS100B12G3H6-S04010019
1200V 100A IGBT Half Bridge Module
1200V 100A IGBT
□ 1200V Trench+ Field Stop technology
□ Freewheeling diodes with fast and soft reverse recovery
□ VCE(sat) with positive temperature coefficient
□ Low switching losses
A "1200V 100A IGBT" is an Insulated Gate Bipolar Transistor designed for applications that require control over moderate to high voltage and current levels. Commonly used in high-power systems like motor drives and inverters, it necessitates effective cooling for optimal performance. Detailed specifications can be found in the manufacturer's datasheet.
Output characteristic(typical) Output characteristic(typical)
IC = f (VCE) IC = f (VCE) Tvj= 150°C
IGBT
Transfer characteristic(typical) Switching losses IGBT (typical)
IC = f (VGE) E = f (RG)
VCE = 20V VGE = ±15V, IC = 30A, VCE = 600V
IGBT RBSOA
Switching losses IGBT (typical) Reverse bias safe operating area(RBSOA)
E = f (IC) IC =f (VCE)
VGE = ±15V, RG = 10Ω , VCE = 600V VGE = ±15V, Rgoff = 10Ω, Tvj = 150°C
Typical capacitance as a function of collector-emitter voltage Gate charge (typical)
C = f (VCE) VGE = f (QG)
f = 100 kHz, VGE = 0V IC = 100A, VCE = 600V
IGBT
IGBT transient thermal impedance as a function of pulse width Forward characteristic of Diode (typical)
Zth(j-c) = f (t) IF = f (VF)
Switching losses Diode(typical) Switching losses Diode(typical)
Erec = f (RG) Erec = f (IF)
IF = 30A, VCE = 600V RG = 10Ω, VCE = 600V
Diode transient thermal impedance as a function of pulse width
Zth(j-c) = f (t)
The "1200V 100A IGBT Half Bridge Module" integrates two IGBTs in a half-bridge configuration, suitable for applications requiring moderate power levels. It provides precise control over voltage (1200V) and current (100A), and effective cooling is essential for reliable operation. Detailed specifications can be found in the manufacturer's datasheet.
Circuit diagram headline
Package outlines
Dimensions in (mm)
mm
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