IGBT / IGBT

Maximum Rated Values / 最大额定值

Item

Symbol

Conditions

Value

Units

集电极－发射极电压

Collector-emitter voltage

VCES

Tvj=25°C

1200

V

连续集电极直流电流

Continuous DC collector current

IC

200

A

集电极重复峰值电流

Peak repetitive collector current

ICRM

tp=1ms

400

A

总功率损耗

Total power dissipation

Ptot

TC=25°C, Tvj=175°C

830

W

栅极－发射极峰值电压

Maximum gate-emitter voltage

VGES

±20

V

最高结温

Maximum junction temperature

Tvj,max

175

°C

Characteristic Values / 特征值

Item

Symbol

Conditions

Min. Typ. Max.

Units

集电极－发射极饱和电压

Collector-emitter saturation voltage

VCE(sat)

IC=200A,VGE=15V Tvj=25°C

1.80 2.25

V

栅极阈值电压

Gate threshold voltage

VGE(th)

IC=6.7mA, VCE=VGE, Tvj=25°C

5.0 5.8 6.8

V

栅极电荷

Gate charge

QG

VGE=-15V…+15V, Tvj=25°C

1.27

uC

内部栅极电阻

Internal gate resistor

RGint

Tvj=25°C

6.5

Ω

输入电容

Input capacitance

Cies

f=1MHz, Tvj=25°C, VCE=25V, VGE=0V

19.5

nF

反向传输电容

Reverse transfer capacitance

Cres

f=1MHz, Tvj=25°C, VCE=25V, VGE=0V

0.46

nF

集电极-发射极截止电流

Collector-emitter cut-off current

ICES

VCE=1200V, VGE=0V, Tvj=25°C

1.00

mA

栅极-发射极漏电流

Gate-emitter leakage current

IGES

VCE=0V, VGE=20V, Tvj=25°C

500

nA

短路数据

SC data

ISC

VGE ≤±15V,tp ≤10us,VCC=600V, Tvj= 150°C VCE, max=VCES-Ls.CE x di/dt

600

A

结－外壳热阻

Thermal resistance, junction to case

RthJC

Per IGBT / 每个 IGBT

0.18

K/W

工作温度

Temperature under switching conditions

Tvjop

-40 150

°C

Inverse Diode / 逆二极管

Maximum Rated Values /最大额定值

Item

Symbol

Conditions

Value

Units

反向重复峰值电压

Peak repetitive reverse voltage

VRRM

Tvj=25°C

1200

V

连续正向直流电流

Continuous DC forward current

IF

75

A

正向重复峰值电流

Peak repetitive forward current

IFRM

tp= 1ms

150

A

Characteristic Values / 特征值

Item

Symbol

Conditions

Min. Typ. Max.

Units

正向电压

Forward voltage

VF

IF=70A

Tvj=25°C

Tvj=150°C

1.90

1.90

2.20

V

反向恢复峰值电流

Peak reverse recovery current

Irm

IF=70A

Tvj=25°C

Tvj=150°C

45

60

A

反向恢复电荷

Reverse recovery charge

Qrr

-diF/dtoff=1200A/µs

VR = 600 V

Tvj=25°C

Tvj=150°C

4

8

µC

反向恢复损耗(每脉冲)

Reverse recovery energy (per pulse)

Erec

VGE=-15V

Tvj=25°C

Tvj=150°C

1.2

2.5

mJ

结－外壳热阻

Thermal resistance, junction to case

RthJC

Per diode / 每个二极管

0.6

K/W

工作温度

Temperature under switching conditions

Tvjop

-40 150

°C

Item

Symbol

Conditions

Value

Units

反向重复峰值电压

Peak repetitive reverse voltage

VRRM

Tvj=25°C

1200

V

连续正向直流电流

Continuous DC forward current

IF

200

A

正向重复峰值电流

Peak repetitive forward current

IFRM

tp= 1ms

400

A

Characteristic Values / 特征值

Item

Symbol

Conditions

Min. Typ. Max.

Units

正向电压

Forward voltage

VF

IF=150A Tvj=25°C

2.0

V

结－外壳热阻

Thermal resistance, junction to case

RthJC

Per diode / 每个二极管

0.29

K/W

工作温度

Temperature under switching conditions

Tvjop

-40 150

°C

Module / 模块

Item

Symbol

Conditions

Value

Unit

s

绝缘测试电压

Isolation test voltage

VISOL

RMS, f=50Hz, t=1min

2.5

kV

模块基板材料

Material of module baseplate

Cu

内部绝缘

Internal isolation

基本绝缘 (class 1, IEC 61140)

Basic insulation (class 1, IEC 61140)

Al2O3

爬电距离

Cree page distance

端子-散热片 / terminal to heat sink

端子-端子/terminal to terminal

17

20

mm

电气间隙

Clearance

端子-散热片 / terminal to heat sink

端子-端子/terminal to terminal

17

9.5

mm

相对电痕指数

Comparative tracking index

CTI

> 200

Item

Symbol

Conditions

Min.

Typ.

Max.

Units

杂散电感,模块

Stray inductance module

LsCE

30

nH

模块引脚电阻,端子-芯片

Module Lead Resistance ,Terminals-Chip

RCC ’+EE’

RAA’+CC

0.65

mΩ

储存温度

Storage temperature

Tstg

-40

125

°C

模块安装的安装扭距

Mounting torque for module mounting

M

M6

3.00

5.00

Nm

模块安装的安装扭距

Mounting torque for module mounting

M

M5

2.50

5.00

Nm

重量

Weight

G

155

g