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1200V 15A IGBT Modules EasyPIM DS-SPS15P12W1M4-S040600003

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1200V 15A IGBT Modules EasyPIM DS-SPS15P12W1M4-S040600003

Model Number : SPS15P12W1M4

Collector Current : 100A

Collector Emitter Voltage : 1200V

Current : 100A

Gate Emitter Charge : 120nC

Gate Emitter Resistance : 1.5Ω

Gate Emitter Voltage : ±20V

Module Weight : 200g

Operating Temperature : -40°C to +150°C

Package Type : EasyPIM

Reverse Recovery Time : 50ns

Short Circuit Withstand Time : 10μs

Switching Frequency : 20kHz

Thermal Resistance : 0.1°C/W

Voltage : 1200V

Product Name : Driver IGBT Module, IGBT Transistor Module, Single Igbt Module

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Solid Power-DS-SPS15P12W1M4-S040600003

1200V 15A IGBT PIM Module

1200V 15A IGBT PIM

1200V 15A IGBT Modules EasyPIM DS-SPS15P12W1M4-S040600003

Features:

□ 1200V Trench+ Field Stop technology

□ Freewheeling diodes with fast and soft reverse recovery

□ VCE(sat) with positive temperature coefficient

□ Low switching losses

□ Short circuit ruggedness

Typical Applications:

□ Servo Drives

□ Converters

□ Inverters

1200V 15A IGBT Modules EasyPIM DS-SPS15P12W1M4-S040600003

Package

Item Symbol Conditions Values Unit

Isolation test voltage

 VISOL RMS, f = 50 Hz, t =1 min

2.5

kV

Internal isolation

(class 1, IEC 61140)

Basic insulation (class 1, IEC 61140)

Al2O3

Creepage distance

 dCreep terminal to heatsink 11.5

mm
dCreep terminal to terminal 6.3

Clearance

 dClear terminal to heatsink 10.0

mm
dClear terminal to terminal 5.0

Comparative tracking index

 CTI

＞200
Item Symbol Conditions Values Unit
Min. Typ. Max.

Stray inductance module

 LsCE

30

nH

Module lead resistance, terminals - chip

 RCC’+EE’ TC=25℃ 8.00

mΩ
RAA’+CC’ 6.00

Storage temperature

 Tstg

-40

125

℃

Mounting Force Per Clamp

 F

20

50

N

Weight

 G

23

g

1200V 15A IGBT Modules EasyPIM DS-SPS15P12W1M4-S040600003

IGBT,/IGBT,Inverter

Maximum Rated Values

Item Symbol Conditions Values Unit

Collector-emitter Voltage

 VCES Tvj=25℃

1200

V

Maximum gate-emitter voltage

 VGES

±20

V

Transient gate-emitter voltage

 VGES tp≤10μs,D=0.01

±30

V

Continuous DC collector current

 IC TC=25℃ 20

A
TC=80℃ 15

Pulsed collector current,tp limited by Tjmax

 ICpulse

30

A

Power dissipation

 Ptot

130

W

1200V 15A IGBT Modules EasyPIM DS-SPS15P12W1M4-S040600003

Characteristic Values

Item Symbol Conditions Values Unit
Min. Typ. Max.

Collector-emitter saturation voltage

 VCE(sat) IC=15A, VGE=15V Tvj=25℃ 1.95 2.40

V
Tvj=125℃ 2.46
Tvj=150℃ 2.54

Gate threshold voltage

 VGE(th) VCE=VGE, IC=0.48mA

5.1

5.7

6.3

V

Collector-emitter cut-off current

 ICES VCE=1200V, VGE=0V Tvj=25℃ 100 µA
Tvj=150℃ 5 mA

Gate-emitter leakage current

 IGES VCE=0V,VGE=±20V, Tvj=25℃

-100

100

nA

Gate Charge

 QG VCE=600V, IC=15A , VGE=±15V 0.1 μC

Input Capacitance

 Cies VCE=25V, VGE=0V, f =1MHz 0.9

nF

Reverse Transfer Capacitance

 Cres 0.04

Internal gate resistor

 RGint Tvj=25℃ 0 Ω

Turn-on delay time,inductive load

 td(on) VCC=600V,IC=15A RG=40Ω VGE=±15V Tvj=25℃ 46 ns
Tvj=125℃ 42 ns
Tvj=150℃ 44 ns

Rise Time,inductive load

 tr Tvj=25℃ 38 ns
Tvj=125℃ 41 ns
Tvj=150℃ 39 ns

Turn-off delay time,inductive load

 td(off) VCC=600V,IC=15A RG=40Ω VGE=±15V Tvj=25℃ 215 ns
Tvj=125℃ 249 ns
Tvj=150℃ 259 ns

Fall time,inductive load

 tf Tvj=25℃ 196 ns
Tvj=125℃ 221 ns
Tvj=150℃ 203 ns

Turn-on energy loss per pulse

 Eon VCC=600V,IC=15A RG=40Ω VGE=±15V Tvj=25℃ 1.57 mJ
Tvj=125℃ 2.12 mJ
Tvj=150℃ 2.25 mJ

Turn off Energy loss per pulse

 Eoff Tvj=25℃ 0.89 mJ
Tvj=125℃ 1.07 mJ
Tvj=150℃ 1.16 mJ

SC data

 ISC VGE≤15V, VCC=800V tp≤10µs Tvj=150℃

70

A

IGBT thermal resistance,junction-case

 RthJC 1.15 K /W

Operating Temperature

 TJop -40 150 ℃

1200V 15A IGBT Modules EasyPIM DS-SPS15P12W1M4-S040600003

Diode,Inverter

Maximum Rated Values

Item Symbol Conditions Values Unit

Repetitive reverse voltage

 VRRM Tvj=25℃

1200

V

Continuous DC forward current

 IF

15

A

Diode pulsed current,tp limited by TJmax

 IFpulse

30

I2t-value

 I2t tp=10ms Tvj=125℃

136

 A2s

Characteristic Values

Item Symbol Conditions Values Unit
Min. Typ. Max.

Forward voltage

 VF IF=15A , VGE=0V Tvj=25℃ 1.60 2.10

V
Tvj=125℃ 1.75
Tvj=150℃ 1.78

Peak reverse recovery current

 IRRM

IF=15A

dIF/dt=-250A/μs (Tvj=150°C) VR=600V,

VGE=-15V

 Tvj=25℃ 13

A
Tvj=125℃ 15
Tvj=150℃ 17

Reverse recovery charge

 QRR Tvj=25℃ 1.87

µC
Tvj=125℃ 3.33
Tvj=150℃ 3.82

Reverse recovery energy loss per pulse

 Erec Tvj=25℃ 0.70

mJ
Tvj=125℃ 1.28
Tvj=150℃ 1.45

Diode thermal resistance,junction-case

 RthJCD

1.90

K /W

Operating Temperature

 TJop

-40

150

℃

Diode,Rectifier

Maximum Rated Values

Item Symbol Conditions Values Unit

Repetitive reverse voltage

 VRRM Tvj=25℃

1600

V
Maximum RMS forward current per chip IFRMSM TC=80℃

16

A

Maximum RMS current at rectifier output

 IRMSM TC=80℃

16

Surge forward current

 IFSM tp=10ms Tvj=25℃

190

I²t - value

 I2t tp=10ms Tvj=25℃

181

 A2s

Characteristic Values

Item Symbol Conditions Values Unit
Min. Typ. Max.

Forward voltage

 VF IF=15A Tvj=25℃

0.95

V

Reverse current

 IR VR=1600V Tvj=25℃

5

μA

Diode thermal resistance,junction-case

 RthJCD

1.50

K /W

Operating Temperature

 TJop

-40

150

℃

IGBT,Brake-Chopper/IGBT

Maximum Rated Values

Item Symbol Conditions Values Unit

Collector-emitter Voltage

 VCES Tvj=25℃

1200

V

Maximum gate-emitter voltage

 VGES

±20

V

Transient gate-emitter voltage

 VGES tp≤10μs,D=0.01

±30

V

Continuous DC collector current

 IC TC=80℃

15

A

Pulsed collector current,tp limited by Tjmax

 ICpulse

30

A

Power dissipation

 Ptot

130

W

IGBT,Brake-Chopper/IGBT

Characteristic Values

Item Symbol Conditions Values Unit
Min. Typ. Max.

Collector-emitter saturation voltage

 VCE(sat) IC=15A, VGE=15V Tvj=25℃ 2.08 2.50

V
Tvj=125℃ 2.37
Tvj=150℃ 2.45

Gate threshold voltage

 VGE(th) VCE=VGE, IC=0.48mA

5.1

5.7

6.3

V

Collector-emitter cut-off current

 ICES VCE=1200V, VGE=0V Tvj=25℃ 100 µA
Tvj=150℃ 5 mA

Gate-emitter leakage current

 IGES VCE=0V,VGE=±20V, Tvj=25℃

-100

100

nA

Gate Charge

 QG VCE=600V, IC=15A , VGE=±15V 0.1 μC

Input Capacitance

 Cies VCE=25V, VGE=0V, f =1MHz 0.86

nF

Reverse Transfer Capacitance

 Cres 0.02

Internal gate resistor

 RGint Tvj=25℃ 0 Ω

Turn-on delay time,inductive load

 td(on) VCC=600V,IC=15A RG=40Ω VGE=±15V Tvj=25℃ 51 ns
Tvj=125℃ 47 ns
Tvj=150℃ 40 ns

Rise Time,inductive load

 tr Tvj=25℃ 44 ns
Tvj=125℃ 48 ns
Tvj=150℃ 56 ns

Turn-off delay time,inductive load

 td(off) VCC=600V,IC=15A RG=40Ω VGE=±15V Tvj=25℃ 216 ns
Tvj=125℃ 254 ns
Tvj=150℃ 262 ns

Fall time,inductive load

 tf Tvj=25℃ 194 ns
Tvj=125℃ 213 ns
Tvj=150℃ 219 ns

Turn-on energy loss per pulse

 Eon VCC=600V,IC=15A RG=40Ω VGE=±15V Tvj=25℃ 0.92 mJ
Tvj=125℃ 1.21 mJ
Tvj=150℃ 1.31 mJ

Turn off Energy loss per pulse

 Eoff Tvj=25℃ 0.88 mJ
Tvj=125℃ 1.11 mJ
Tvj=150℃ 1.15 mJ

IGBT thermal resistance,junction-case

 RthJC 1.15 K /W

Operating Temperature

 TJop -40 150 ℃

Diode,Brake-Chopper

Maximum Rated Values

Item Symbol Conditions Values Unit

Repetitive reverse voltage

 VRRM Tvj=25℃

1200

V

Continuous DC forward current

 IF

8

A

Diode pulsed current,tp limited by TJmax

 IFpulse

16

I2t-value

 I2t tp=10ms Tvj=125℃

25

 A2s

Characteristic Values

Item Symbol Conditions Values Unit
Min. Typ. Max.

Forward voltage

 VF IF=8A , VGE=0V Tvj=25℃ 1.88 2.40

V
Tvj=125℃ 1.96
Tvj=150℃ 1.90

Peak reverse recovery current

 IRRM

IF=8A

dIF/dt=-200A/μs (Tvj=150°C) VR=600V,

VGE=-15V

 Tvj=25℃ 6

A
Tvj=125℃ 7
Tvj=150℃ 8

Reverse recovery charge

 QRR Tvj=25℃ 0.68

µC
Tvj=125℃ 1.22
Tvj=150℃ 1.32

Reverse recovery energy loss per pulse

 Erec Tvj=25℃ 0.27

mJ
Tvj=125℃ 0.49
Tvj=150℃ 0.53

Diode thermal resistance,junction-case

 RthJCD

1.90

K/W

Operating Temperature

 TJop

-40

150

℃

NTC-Thermistor

Characteristic Values

Item Symbol Conditions Values Unit

Rated resistance

 R25 TC=25℃

5.00

kΩ

B-value

 R25/50

3375

K

IGBT IGBT

Output characteristic IGBT,Inverter(typical) Output characteristic IGBT,Inverter(typical)

IC = f (VCE) IC = f (VCE) Tvj= 150°C

1200V 15A IGBT Modules EasyPIM DS-SPS15P12W1M4-S040600003

IGBT IGBT

Transfer characteristic IGBT,Inverter(typical) Switching losses IGBT,Inverter (typical)

IC = f (VGE) E = f (RG)

VCE = 20V VGE = ±15V, IC = 15A, VCE = 600V

1200V 15A IGBT Modules EasyPIM DS-SPS15P12W1M4-S040600003

IGBT IGBT,(RBSOA)

Switching losses IGBT,Inverter( (typical) Reverse bias safe operating area IGBT,Inverter(RBSOA)

E = f (IC) IC =f (VCE)

VGE = ±15V, RG = 40Ω , VCE = 600V VGE = ±15V, RGoff = 40Ω, Tvj = 150°C

1200V 15A IGBT Modules EasyPIM DS-SPS15P12W1M4-S040600003

IGBT

Transient thermal impedance IGBT,Inverter Forward characteristic of Diode,Inverter (typical)

Zth(j-c) = f (t) IF = f (VF)

1200V 15A IGBT Modules EasyPIM DS-SPS15P12W1M4-S040600003

Switching losses Diode,Inverter(typical) Switching losses Diode,Inverter(typical)

Erec = f (RG) Erec = f (IF)

IF = 15A, VCE = 600V RG = 40Ω, VCE = 600V

1200V 15A IGBT Modules EasyPIM DS-SPS15P12W1M4-S040600003

Transient thermal impedance Diode,Inverter Forward characteristic of Diode,Rectifier (typical)

Zth(j-c) = f (t) IF = f (VF)

1200V 15A IGBT Modules EasyPIM DS-SPS15P12W1M4-S040600003

IGBT

Output characteristic,Brake-Chopper(typical) Forward characteristic of Diode,Brake-Chopper (typical)

IC = f (VCE) IF = f (VF)

1200V 15A IGBT Modules EasyPIM DS-SPS15P12W1M4-S040600003

NTC-Thermistor-temperature characteristic (typical)

R = f (T)

1200V 15A IGBT Modules EasyPIM DS-SPS15P12W1M4-S040600003

"IGBT 15A 1200V" refers to an Insulated Gate Bipolar Transistor with a current rating of 15 amperes and a voltage rating of 1200 volts. This type of IGBT is suitable for applications with moderate power requirements, such as household appliances, small motor drives, and low-power inverters. Proper thermal management measures are necessary when using this device, and specific technical specifications and usage guidelines can be found in the manufacturer's datasheet based on the specific application requirements.

Circuit diagram headline

1200V 15A IGBT Modules EasyPIM DS-SPS15P12W1M4-S040600003

Package outlines

1200V 15A IGBT Modules EasyPIM DS-SPS15P12W1M4-S040600003

Dimensions in (mm)

mm


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