Sign In | Join Free | My fazendomedia.com |
|
Model Number : SPS40G12E3S
Collector Emitter Capacitance : 170 pF
Configuration : Single
Current Collector Continuous : 50 A
Current Collector Pulsed : 200 A
Gate Charge : 80 nC
Mounting Style : Through Hole
Operating Temperature Range : -55 to 150 degrees Celsius
Package Type : TO-247
Package/Case : TO-247-3
Reverse Recovery Time : 50 ns
Transistor Polarity : N-Channel
Voltage Collector Emitter Breakdown Max : 1200 V
Voltage Collector Emitter Saturation Max : 2.2 V
Voltage Gate Emitter Threshold Max : 5 V
Product Name : igbt transistor module, sic igbt module, transistors igbt
Solid Power-DS-SPS40G12E3S-S03010001 V1.0
1200V 40A IGBT Discrete
1200V 40A IGBT
General Description
SOLIDPOWER IGBT Discrete provides low switching losses as well as high RBSOA capability. They are designed for the applications such as industrial UPS, charger, Energy storage, Three-level solar string inverter, welding etc.
▪ 1200V Trench Field Stop technology
▪ SiC SBD Freewheeling Diodes
▪ Low switching losses
▪ Low gate charge
Typical Applications:
▪ Industrial UPS
▪ Charger
▪ Energy storage
▪ Inverter
▪ Welding
IGBT IGBT
Output characteristic IGBT Output characteristic IGBT
IC=f(VCE),Tvj=25°C IC=f(VCE) , Tvj=175°C
FRD IGBT
Output characteristic FRD Collector-emitter saturation voltage IGBT
IF=f(VF) VCE(sat)=f (Tj)
FRD IGBT
Collector-emitter saturation voltage FRD Gate-emitter threshold voltage IGBT
VF=f (Tj) VGE(th) =f (Tj)
FRD IGBT
Output characteristic FRD Collector Current IGBT
IF=f(VF) IC=f(TC)
VGE≥15V,Tvj≤175°C
Gate Charge Characteristics Capacitance Characteristic
VGE(th) =f (Qg) VCE=25V, VGE=0V, f=1MHZ
VGE =15V, IC=40A
IGBT IGBT
Switching Time IGBT Switching Time IGBT
ts=f (IC), Tvj=25°C ts=f (IC), Tvj=175°C
IGBT IGBT
Switching Time IGBT Switching Time IGBT
ts=f (RG), Tvj=25°C ts=f (RG), Tvj=175°C
VGE=15V, VCE=600V, IC=40A VGE=15V, VCE=600V, IC=40A
IGBT IGBT
Switching Time IGBT Switching losses IGBT
ts=f (Tj) E=f (Tj)
VGE=15V, VCE=600V, RG=12Ω, IC=40A VGE=15V, VCE=600V, RG=12Ω, IC=40A
IGBT IGBT
Switching losses IGBT Switching losses IGBT
E=f ( IC) E=f ( IC)
VGE=15V, VCE=600V, RG=12Ω, Tvj=25°C VGE=15V, VCE=600V, RG=12Ω, Tvj=175°C
IGBT IGBT
Switching losses IGBT Switching losses IGBT
E=f (RG) E=f (RG)
VGE=15V, VCE=600V, IC=40A, Tvj=25°C VGE=15V, VCE=600V, IC=40A, Tvj=175°C
IGBT IGBT
Switching losses IGBT Switching losses IGBT
E=f (VCE), Tvj=25°C E=f (VCE), Tvj=175°C
VGE=15V, RG=12Ω, IC=40A VGE=15V, RG=12Ω, IC=40A
IGBT
Forward Bias SOA Transient thermal impedance IGBT
TC=25°C , VGE=15V, Tvj≤175°C ZthJA=f (t)
This is a discrete Insulated Gate Bipolar Transistor (IGBT) with a voltage rating of 1200V and a current rating of 40A. IGBTs are commonly used in power electronic applications for switching high voltages and currents. The specifications indicate that this particular IGBT can handle a maximum voltage of 1200V and a maximum current of 40A. In practical applications, appropriate drive circuitry and heat dissipation considerations are important for ensuring the reliability and performance of the IGBT.
Circuit diagram headline
Package outlines
![]() |
Low Switching Losses Infineon Discrete IGBT Transistor Module OEM Images |